PART |
Description |
Maker |
APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET LINEAR MOSFET 600V 43A 0.125?/a> LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp. Advanced Power Technology
|
RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
CM75DY-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
RJH60D3DPE-00-J3 RJH60D3DPE |
30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA Ultrafast IGBT Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
RJH60D0DPK RJH60D0DPK-00-T0 |
Silicon N Channel IGBT Application: Inverter 40 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
RJH60D0DPM RJH60D0DPM-00-T1 |
Silicon N Channel IGBT Application: Inverter 45 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
IXGR40N60BD1 |
IGBT with Diode(VCES00V,VCE(sat).2V的绝缘栅双极晶体带二极管 70 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
PDMB150A6 |
IGBT MODULE Dual 150A 600V 150 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. NIEC[Nihon Inter Electronics Corporation]
|